不久前，东芝宣布推出24nm工艺的NAND闪存芯片。而半个月后的今天，东芝再次宣布，正式推出19nm工艺的NAND闪存芯片，单芯片容量达8GB，是目前密度最高的8GB NAND闪存芯片。
24nm工艺已成过去?
根据东芝方面表示，该款19nm工艺的NAND闪存芯片采用了2位元（bit-per-cell）结构，容量达64Gb（即8GB），是目前体积最小、密度最高的8GB NAND闪存芯片。凭借这款芯片，智能手机、平板电脑等便携式设备即可轻松达到128GB的储存容量。
另外，东芝还表示该款19nm工艺的NAND闪存芯片支持DDR 2.0技术，稍后还会推出3位元结构的产品，更多详情可浏览东芝官方网站。
游客 2016-01-07 07:56
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游客 2016-01-06 13:22
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游客 2011-04-21 23:51
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